SKM400GAL12E4, SKM400GAL12E4 Single IGBT Module, 618 A 1200 V, 5-Pin SEMITRANS3, Panel MountSKM400GAL12E4
SKM150GB12V, БТИЗ массив и модульный транзистор, Half Bridge, 231 А, 1.75 В, 175 °C, ModuleSKM150GB12V
SEMIX402GAL066HDS, Модуль: IGBT, диод/транзистор, boost chopper, Urmax: 600В, Ic: 379АSEMIX402GAL066HDS